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PD -97466 IRFH5206PBF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 6.7 40 1.7 89 V m: nC Qg (typical) RG (typical) ID : A (@Tc(Bottom) = 25C) PQFN 5X6 mm Applications * * * * Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features and Benefits Features Low RDSon ( 7.0m at Vgs=10V) Low Thermal Resistance to PCB ( 1.2C/W) 100% Rg tested Low Profile ( 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number IRFH5206TRPBF IRFH5206TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 60 20 16 13 89 56 350 3.6 100 0.83 -55 to + 150 Units V A g f c W W/C C Linear Derating Factor (Bottom) Operating Junction and Storage Temperature Range f Notes through are on page 8 www.irf.com 1 3/15/10 IRFH5206PBF Static @ TJ = 25C (unless otherwise specified) BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 60 --- --- 2.0 --- --- --- --- --- 73 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.07 5.6 --- -9.7 --- --- --- --- --- 40 6.2 3.4 12 18.4 15.4 14 1.7 6.4 11 22 8.2 2490 360 160 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 6.7 m VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 100A --- mV/C 20 VDS = 60V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V 100 nA -100 VGS = -20V --- S VDS = 25V, ID = 50A 60 VDS = 30V --- VGS = 10V --- nC ID = 50A --- --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V e --- --- --- --- --- --- --- --- ns VDD = 30V, VGS = 10V ID = 50A RG=1.8 See Fig.15 VGS = 0V VDS = 25V = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Min. --- --- Typ. --- --- Typ. --- --- Max. 87 50 Units mJ A Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Max. Units 89 A 350 Conditions MOSFET symbol showing the integral reverse G D --- --- 1.3 V --- 26 39 ns --- 110 165 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 30V di/dt = 500A/s e S eA Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f Parameter g g Typ. --- --- --- --- Max. 1.2 15 35 22 Units C/W 2 www.irf.com IRFH5206PBF 1000 TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V 1000 TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 3.8V 1 3.8V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 0.1 1 60s PULSE WIDTH Tj = 150C 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 2.0 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 50A VGS = 10V 1.5 ID, Drain-to-Source Current (A) 100 TJ = 150C 10 TJ = 25C 1 1.0 VDS = 25V 60s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance Vs. Temperature 14.0 ID= 50A VGS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 C, Capacitance (pF) Ciss VDS = 48V VDS = 30V VDS= 12V 1000 Coss Crss 100 1 10 100 20 30 40 50 60 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage www.irf.com 3 IRFH5206PBF 1000 1000 OPERATION IN THIS ARE LIMITED BY R DS (on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100 1msec 100sec 10 10 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0.1 1 10 100 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Fig 8. Maximum Safe Operating Area 4.0 VGS(th), Gate threshold Voltage (V) 80 3.5 ID , Drain Current (A) 60 3.0 40 2.5 ID = 150A ID = 500A ID = 1.0mA ID = 1.0A 20 2.0 0 25 50 75 100 125 150 1.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) TC , CaseTemperature (C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature 10 Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com IRFH5206PBF ) RDS(on), Drain-to -Source On Resistance (m ID = 50A EAS , Single Pulse Avalanche Energy (mJ) 20 400 ID 5.1A 13A BOTTOM 50A TOP 300 15 200 TJ = 125C 10 100 TJ = 25C 5 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V tp VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A I AS 0.01 Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms VDS VGS RG V10V GS Pulse Width 1 s Duty Factor 0.1 RD 90% D.U.T. + VDS -VDD 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms www.irf.com 5 IRFH5206PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Vds Vgs Id L 0 DUT 1K S VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform 6 www.irf.com IRFH5206PBF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ("4 or 5 digits") MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH5206PBF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm Yes guidelines ) MS L1 (per JE DE C J-S T D-020D ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.07mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/2010 8 www.irf.com |
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